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Serie CD8P-V de KIOXIA (E3.S)
Unidad SSD NVMe™ de uso mixto para centros de datos
La serie CD8-V es una unidad SSD NVMe™ de uso mixto optimizada para soportar una amplia gama de aplicaciones escalables y en la nube que incluyen macrodatos/IoT, procesamiento de transacciones en línea y virtualización. Construidas con una interfaz PCIe ® 5.0 (32 GT/s x4), las SSD de la serie CD8P-V ofrecen un rendimiento uniforme de hasta 2.000K IOPS (lectura aleatoria) y 400K IOPS (escritura aleatoria), y logran un aumento del 60 % al 80 % en el rendimiento de lectura secuencial en comparación con las SSD PCIe ® 4.0 de la generación anterior (KIOXIA serie CD8-V de 2,5 pulgadas).
Con memoria flash TLC KIOXIA BiCS FLASH™ generación 5, las unidades SSD de factor de forma de 2,5 pulgadas CD8P-V E3.S ofrecen 3 DWPD (escrituras de unidades por día) de resistencia y capacidades de almacenamiento de hasta 12,8 TB, lo que las hace ideales para aplicaciones de centros de datos de hiperescala.
Documentos
Características
- Cumplimiento de las especificaciones de PCIe®5.0 y NVMe™2.0
- Compatibilidad con la especificación v2.0 de Open Compute Project Datacenter NVMe™ SSD (no todos los requisitos)
- Factor de forma E3.S, espesor de 7,5 mm
- Arquitectura patentada de KIOXIA: controlador, firmware y memoria flash BiCS FLASH™ generación 5 TLC
- Diseño con puerto simple, optimizado para cargas de trabajo para clases de centros de datos
- Rendimiento uniforme y confiabilidad para entornos exigentes las 24 del día, los 7 días de la semana
- Diseñada para la implementación de almacenamiento de alta densidad
- Protección contra la pérdida de energía (PLP) y corrección de datos de punta a punta
- Opciones de seguridad SIE, SED[1][2][3][4]
Aplicaciones principales
- Hiperescala
- IoT y análisis de macrodatos
- Procesamiento de transacciones en línea (OLTP)
(bases de datos transaccionales y relacionales) - Entornos virtualizados
- Transmisión de medios y redes de distribución de contenido
Especificaciones
* Table can be scrolled horizontally.
Base Model Number | KCD81PJE12T8 | KCD81PJE6T40 | KCD81PJE3T20 | KCD81PJE1T60 |
---|---|---|---|---|
SIE Model Number | KCD8XPJE12T8 | KCD8XPJE6T40 | KCD8XPJE3T20 | KCD8XPJE1T60 |
SED Model Number | KCD8DPJE12T8 | KCD8DPJE6T40 | KCD8DPJE3T20 | KCD8DPJE1T60 |
Capacity | 12,800 GB | 6,400 GB | 3,200 GB | 1,600 GB |
Basic Specifications | ||||
Form Factor | E3.S | |||
lnterface | PCIe® 5.0, NVMe™ 2.0 | |||
Maximum Interface Speed | 128 GT/s (PCIe® Gen5 x4) | |||
Flash Memory Type | BiCS FLASH™ TLC | |||
Performance (Up to) | ||||
Sustained 128 KiB Sequential Read | 12,000 MB/s | |||
Sustained 128 KiB Sequential Write | 5,300 MB/s | 5,500 MB/s | 3,500 MB/s | |
Sustained 4 KiB Random Read | 2,000K IOPS | 1,900K IOPS | 1,600K IOPS | |
Sustained 4 KiB Random Write | 400K IOPS | 300K IOPS | ||
Power Requirements | ||||
Supply Voltage | 12 V ± 10 %, 3.3 V ± 15 % | |||
Power Consumption (Active) | 23 W typ. | 21 W typ. | 19 W typ. | 18 W typ. |
Power Consumption (Ready) | 5 W typ. | |||
Reliability | ||||
MTTF | 2,500,000 hours | |||
Warranty | 5 years | |||
DWPD | 3 | |||
Dimensions | ||||
Thickness | 7.5 mm +0.2 / -0.5 mm | |||
Width | 76 mm ± 0.25 mm | |||
Length | 112.75 mm ± 0.4 mm | |||
Weight | 110 g Max | |||
Environmental | ||||
Temperature (Operating) | 0 °C to 73 °C | 0 °C to 76 °C | ||
Temperature (Non-operating) | -40 °C to 85 °C | |||
Humidity (Operating) | 5 % to 95 % R.H. | |||
Vibration (Operating) | 21.27 m/s2 { 2.17 Grms } ( 5 to 800 Hz ) | |||
Shock (Operating) | 9.8 km/s2 { 1,000 G } ( 0.5 ms ) |
- Product image may represent a design model.
- Definition of capacity: KIOXIA Corporation defines a megabyte (MB) as 1,000,000 bytes, a gigabyte (GB) as 1,000,000,000 bytes and a terabyte (TB) as 1,000,000,000,000 bytes. A computer operating system, however, reports storage capacity using powers of 2 for the definition of 1 GB = 2^30 = 1,073,741,824 bytes and therefore shows less storage capacity. Available storage capacity (including examples of various media files) will vary based on file size, formatting, settings, software and operating system, and/or pre-installed software applications, or media content. Actual formatted capacity may vary.
- GT/s: Giga Transfers per second.
- A kibibyte (KiB) means 2^10, or 1,024 bytes.
- MTTF (Mean Time to Failure) is not a guarantee or estimate of product life; it is a statistical value related to mean failure rates for a large number of products which may not accurately reflect actual operation. Actual operating life of the product may be different from the MTTF.
- DWPD: Drive Writes Per Day. One full drive write per day means the drive can be written and re-written to full capacity once a day every day for the specified lifetime. Actual results may vary due to system configuration, usage and other factors.
- Read and write speed may vary depending on various factors such as host devices, software (drivers, OS etc.), and read/write conditions.
- IOPS: Input Output Per Second (or the number of I/O operations per second).
- Temperature (operating): Specified by the composite temperature reported by SMART.
- [1] Sanitize Instant Erase (SIE) and Self-Encrypting Drive (SED) security optional models are available.
- [2] SIE optional model supports Crypto Erase, which is a standardized feature defined by the technical committees (SCSI) of INCITS (the InterNational Committee for Information Technology Standards).
- [3] SED optional model supports TCG Opal and Ruby SSCs. It has a few unsupported features of TCG Opal SSC. For more details, please make inquiries through “Contact us”.
- [4] Security optional models are not available in all countries due to export and local regulations.
- All information provided here is subject to change without prior notice.
- PCIe is a registered trademark of PCI-SIG.
- NVMe is a registered or unregistered mark of NVM Express, Inc. in the United States and other countries.
- Other company names, product names, and service names may be trademarks of third-party companies.
Support
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Introducing technical glossary related to KIOXIA's products and technology including semiconductor memory and SSD.
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