imagem_lc9 (E3.L)

SSD NVMe™ Corporativo de Alta Capacidade

O KIOXIA LC9 Series é um SSD de alta capacidade que é adequado para suportar treinamento, inferência e repositórios de armazenamento de data lake em sistemas de IA.

A série KIOXIA LC9 (E3.L) apresenta a memória flash BiCS FLASH - geração 8 QLC da KIOXIA Corporation e suporta 245,76 TB, que é a maior capacidade da série KIOXIA LC9. Ele permite o uso eficiente de energia e o gerenciamento de espaço de infraestrutura com uma pegada física reduzida, bem como menor custo total de propriedade (TCO), aumentando a densidade de armazenamento.

Construídos com base nas tecnologias PCIe® 5.0 e NVMe (2.0), os SSDs da série LC9 oferecem desempenho de leitura estável de até 12.000 MB/s (leitura sequencial) e 1.000 KIOPS (leitura aleatória).

Documentos

Principais recursos

  • PCIe® 5.0 e NVMe™ 2.0 conforme as especificações
  • Suporte a especificação v2.5 do Open Compute Project Datacenter NVMe™ SSD (nem todos os requisitos)
  • Fator de forma E3.L, espessura de 7,5 mm
  • Memória flash QLC BiCS FLASH de 8a geração
  • Arquitetura proprietária da KIOXIA: controlador, firmware e tecnologia BiCS FLASH™
  • Design de porta dupla otimizado para aplicações de alta disponibilidade
  • Proteção contra Perda de Energia (PLP) e Proteção de Dados de Ponta a Ponta
  • Adequado para cargas de trabalho empresariais 24x7
  • Opções de segurança: SIE, SED, FIPS SED[1][2][3][4][5]
  • TCG OPAL 2.02 opcional para SED

Principais aplicações

  • Lagos de dados
  • Sistemas de IA
  • Aplicações de aprendizado de máquina
  • Armazenamento em pequena escala

Especificações

* Table can be scrolled horizontally.

SIE Model NumberRLC9CZV245T
SED Model NumberRLC9EZV245T
FIPS SED Model NumberRLC9GZV245T
Capacity245.76 TB
IU Size16 KiB
Basic Specifications
Form FactorE3.L
lnterfacePCIe® 5.0, NVMe™ 2.0
Maximum Interface Speed128 GT/s (PCIe® Gen5 single x4, dual x2)
Flash Memory TypeBiCS FLASH™ QLC
Performance (Up to)
Sustained 128 KiB Sequential Read12,000 MB/s
Sustained 128 KiB Sequential Write3,500 MB/s
Sustained 4 KiB Random Read1,000 KIOPS
Sustained Random Write45 KIOPS
@ 16 KiB
Power Requirements
Supply Voltage12 V ± 10 %, 3.3 V ± 15 %
Power Consumption (Active)30 W typ.
Power Consumption (Ready)5 W typ.
Reliability
MTTF2,500,000 hours @ 0 ℃ to 50 ℃
2,000,000 hours @ 0 ℃ to 55 ℃
Warranty5 years
DWPD0.075 @ 4 KiB
0.3 @ 16 KiB
Dimensions
Thickness7.5 mm +0.2 / -0.5 mm
Width76 mm ± 0.25 mm
Length142.2 mm ± 0.4 mm
Weight160 g Max
Environmental
Temperature (Operating)0 °C to 75 °C
Temperature (Non-operating)-40 °C to 85 °C
Humidity (Operating)5 % to 95 % R.H.
Vibration (Operating)21.27 m/s2 { 2.17 Grms } ( 5 Hz to 800 Hz )
Shock (Operating)9.8 km/s2 { 1,000 G } ( 0.5 ms )
  • Product image may represent a design model.
  • Definition of capacity: Kioxia Corporation defines a megabyte (MB) as 1,000,000 bytes, a gigabyte (GB) as 1,000,000,000 bytes and a terabyte (TB) as 1,000,000,000,000 bytes. A computer operating system, however, reports storage capacity using powers of 2 for the definition of 1 GB = 2^30 = 1,073,741,824 bytes and 1TB = 2^40 bytes = 1,099,511,627,776 bytes and therefore shows less storage capacity. Available storage capacity (including examples of various media files) will vary based on file size, formatting, settings, software and operating system, and/or pre-installed software applications, or media content. Actual formatted capacity may vary.
  • IU Size: Indirection Unit Size. It is the minimum unit size of the FTL mapping table to manage user data on NAND flash memory.
  • GT/s: Giga Transfers per second.
  • A kibibyte (KiB) means 2^10, or 1,024 bytes.
  • MTTF (Mean Time to Failure) is not a guarantee or estimate of product life; it is a statistical value related to mean failure rates for a large number of products which may not accurately reflect actual operation. Actual operating life of the product may be different from the MTTF.
  • DWPD: Drive Writes Per Day. One full drive write per day means the drive can be written and re-written to full capacity once a day every day under the specified workload for the specified lifetime. Actual results may vary due to system configuration, usage and other factors.
  • Read and write speed may vary depending on various factors such as host devices, software (drivers, OS etc.), and read/write conditions.
  • Random write performance is based on the workload of random writes with the defined IU size for each model.
  • IOPS: Input Output Per Second (or the number of I/O operations per second).
  • Temperature (operating): Specified by the composite temperature reported by SMART.
  • [1] Sanitize Instant Erase (SIE), Self-Encrypting Drive (SED) and FIPS (Federal Information Processing Standards) SED security optional models are available.
  • [2] SIE optional model supports Cryptographic Erase, which is a standardized feature defined by the technical committees (SCSI) of INCITS (the InterNational Committee for Information Technology Standards).
  • [3] SED optional model supports TCG Opal and Ruby SSCs. It has a few unsupported features of TCG Opal SSC. For more details, please make inquiries through “Contact us”.
  • [4] FIPS SED optional model utilizes a security module designed to comply with FIPS 140-3, which defines security requirements for cryptographic module by NIST (National Institute of Standards and Technology). For the latest validation status, please make inquiries through “Contact us”.
  • [5] Security optional models are not available in all countries due to export and local regulations.
  • All information provided here is subject to change without prior notice.
  • PCIe is a registered trademark of PCI-SIG.
  • NVMe is a registered or unregistered mark of NVM Express, Inc. in the United States and other countries.
  • Other company names, product names, and service names may be trademarks of third-party companies.

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