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Toshiba Memory America Unveils UFS Devices Utilizing 64-Layer, 3D Flash Memory
SAN JOSE, Calif., November 29, 2017 – Toshiba Memory America, Inc. (TMA)*, the world leader in memory solutions, has begun sampling Universal Flash Storage (UFS) devices1 utilizing its cutting-edge 64-layer BiCS FLASH™ 3D flash memory.2 The new UFS devices meet performance demands for applications that require high-speed read/write performance and low power consumption, including mobile devices such as smartphones and tablets and augmented /virtual reality systems.
The new lineup will be available in four capacities: 32 gigabyte (GB), 64GB, 128GB, and 256GB3. All of the devices integrate flash memory and a controller in a single, JEDEC-standard 11.5x13mm package. The controller performs error correction, wear leveling, logical-to-physical address translation, and bad-block management – allowing users to simplify system development.
All four devices are compliant with JEDEC UFS Ver. 2.1, including HS-GEAR3, which has a theoretical interface speed of up to 5.8Gbps per lane (x2 lanes=11.6Gbps) while also suppressing any increase in power consumption. Sequential read and write performance4 of the 64GB device are 900MB/sec and 180MB/sec, while the random read and write performance are approximately 200 percent and 185 percent better, respectively, than those of previous generation devices5. Due to its serial interface, UFS supports full duplexing, which enables both concurrent reading and writing between the host processor and UFS device.
Toshiba was the first company in the world6 to announce 3D flash memory technology, and the addition of 3D-based UFS keeps the company at the forefront of innovation while simultaneously enhancing its existing lineup of BiCS FLASH solutions.
“By bringing our industry-leading BiCS FLASH technology to UFS, we continue to expand the capabilities of our embedded storage solutions,” noted Scott Beekman, director of managed flash memory products for TMA. “Higher performance, good power efficiency and an expanded density lineup all enable existing and future applications to realize new possibilities.”
*About Toshiba Memory America, Inc.
Toshiba Memory America, Inc. (TMA) is the US-based subsidiary of Toshiba Memory Corporation, a leading worldwide supplier of flash memory and solid state drives (SSDs). From the invention of flash memory to today’s breakthrough 96-layer BiCS FLASH™ 3D technology, Toshiba continues to lead innovation and move the industry forward. For more information on TMA, please visit www.toshiba.com/TMA and follow the company on Facebook and on Twitter: @ToshibaStorage and @Toshiba_Memory.
1 Universal Flash Storage (UFS) is a product category for a class of embedded memory products built to the JEDEC UFS standard specification.
2 Sample shipments of the 64GB device will start today with the rest of the line-up to gradually follow after December.
3 Product density is identified based on the density of memory chip(s) within the Product, not the amount of memory capacity available for data storage by the end user. Consumer-usable capacity will be less due to overhead data areas, formatting, bad blocks, and other constraints, and may also vary based on the host device and application. For details, please refer to applicable product specifications.
4 Read and write speeds are calculated as 1MB/s=1,000,000bytes/sec. Actual read and write speed may vary depending on the device, read and write conditions, and file size.
5 Toshiba Memory Corporation’s previous generation 64GB device “THGAF4G9N4LBAIR”.
6 Prototype announced June, 2007
- Information in this press release, including product pricing and specifications, content of services, and contact information is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications.