Imagen de bg6_001

SSD NVMe SSD del cliente

La serie KIOXIA BG6 es una línea de SSD NVMe™ de factor de forma compacta con capacidades de hasta 2.048 GB y aprovecha una interfaz compatible con la especificación PCIe® 4.0, interfaz compatible con la especificación NVMe™ 1.4c y memoria flash TLC de 6 generación KIOXIA BiCS FLASH™. Con mayor ancho de banda, gestión flash perfeccionada y tecnología de búfer de memoria de host (HMB), las unidades SSD serie BG6 brindan el mejor rendimiento de lectura en unidades SSD de único paquete, que alcanza velocidades de lectura secuencial de hasta 6.000 MB/s y genera 900K entradas/salidas por segundo (IOPS) de lectura aleatoria.

La serie KIOXIA BG5 de SSDs se encuentran disponibles en capacidades de 256GB, 512GB, 1.024GB y 2.048GB en factores de módulo de forma M.2 tipo 2230 y tipo 2280, lo que los hace adecuados para diseños de sistemas delgados y livianos como computadoras ultradelgadas. La serie KIOXIA BG6 ofrece la opción de un modelo de unidad con autocifrado (SED) compatible con Opal de TCG versión 2.01.

  • Memoria flash TLC KIOXIA BiCS FLASH™ de generación 5 para SSD BG6 de 256 GB y 512 GB de capacidad

Documentos

Características clave

  • Memoria flash TLC KIOXIA BiCS FLASH™ de generación 6 (memoria flash TLC KIOXIA BiCS FLASH™ de generación 5 para 256 GB y 512 GB)
  • Cumplimiento de las especificaciones de PCIe®4.0 y NVMe™ 1.4
  • Capacidades de hasta 2.048 GB
  • Factores de forma M.2 tipo 2230 y tipo 2280 de una cara
  • Opción con SED TCG OPAL 2.01
     

Aplicaciones principales

  • Computadoras ultramóviles
  • Computadoras portátiles 2 en 1

Especificaciones

Factor de forma del módulo M.2 Tipo 2230

* Table can be scrolled horizontally.

Base Model NumberKBG60ZNS2T04KBG60ZNS1T02KBG60ZNS512GKBG60ZNS256G
SED Model NumberKBG6AZNS2T04KBG6AZNS1T02KBG6AZNS512GKBG6AZNS256G
Capacity2,048 GB1,024 GB512 GB256 GB
Basic Specifications
Form FactorM.2 2230-S3 Single-sidedM.2 2230-S2 Single-sided
lnterfacePCIe® 4.0, NVMe™ 1.4c
Maximum Interface Speed64 GT/s (PCIe® Gen4 x4)
Flash Memory TypeBiCS FLASH™ TLC
Performance (Up to)
Sequential Read6,000 MB/s4,800 MB/s4,400 MB/s
Sequential Write5,300 MB/s5,000 MB/s4,000 MB/s3,000 MB/s
Random Read900K IOPS650K IOPS350K IOPS
Random Write900K IOPS850K IOPS700K IOPS
Power Requirements
Supply Voltage3.3 V ± 5 %
Power Consumption (Active)4.4 W typ.4.3 W typ.4.7 W typ.4.3 W typ.
Power Consumption (L1.2 mode)3.0 mW typ.
Reliability
MTTF1,500,000 hours
TBW1,200600300150
Dimensions
Thickness2.38 mm Max2.23 mm Max
Width22 mm ± 0.15 mm
Length30 mm ± 0.15 mm
Weight3.0 g Max2.9 g Max2.8 g Max2.7 g Max
Environmental
Temperature (Operating)0 ℃ to 95 ℃ (Controller Temperature)
Temperature (Operating)0 ℃ to 85 ℃ (Other Components Temperature)
Temperature (Non-operating)-40 ℃ to 85 ℃
Humidity (Operating)0 % to 90 % R.H.
Vibration (Operating)196 m/s2 { 20 Grms } ( 20 to 2,000 Hz )
Shock (Operating)14.7 km/s2 { 1,500 G } ( 0.5 ms )
Factor de forma del módulo M.2 Tipo 2280

* Table can be scrolled horizontally.

Base Model NumberKBG60ZNV2T04KBG60ZNV1T02KBG60ZNV512GKBG60ZNV256G
SED Model NumberKBG6AZNV2T04KBG6AZNV1T02KBG6AZNV512GKBG6AZNV256G
Capacity2,048 GB1,024 GB512 GB256 GB
Basic Specifications
Form FactorM.2 2280-S3 Single-sidedM.2 2280-S2 Single-sided
lnterfacePCIe® 4.0, NVMe™ 1.4c
Maximum Interface Speed64 GT/s (PCIe® Gen4 x4)
Flash Memory TypeBiCS FLASH™ TLC
Performance (Up to)
Sequential Read6,000 MB/s4,800 MB/s4,400 MB/s
Sequential Write5,300 MB/s5,000 MB/s4,000 MB/s3,000 MB/s
Random Read900K IOPS650K IOPS350K IOPS
Random Write900K IOPS850K IOPS700K IOPS
Power Requirements
Supply Voltage3.3 V ± 5 %
Power Consumption (Active)4.4 W typ.4.3 W typ.4.7 W typ.4.3 W typ.
Power Consumption (L1.2 mode)3.0 mW typ.
Reliability
MTTF1,500,000 hours
TBW1,200600300150
Dimensions
Thickness2.38 mm Max2.23 mm Max
Width22 mm ± 0.15 mm
Length80 mm ± 0.15 mm
Weight6.0 g Max5.9 g Max5.8 g Max5.7 g Max
Environmental
Temperature (Operating)0 ℃ to 95 ℃ (Controller Temperature)
Temperature (Operating)0 ℃ to 85 ℃ (Other Components Temperature)
Temperature (Non-operating)-40 ℃ to 85 ℃
Humidity (Operating)0 % to 90 % R.H.
Vibration (Operating)196 m/s2 { 20 Grms } ( 20 to 2,000 Hz )
Shock (Operating)14.7 km/s2 { 1,500 G } ( 0.5 ms )
  • Product image may represent a design model.
  • Availability of the SED model line-up may vary by region.
  • Definition of capacity: KIOXIA Corporation defines a megabyte (MB) as 1,000,000 bytes, a gigabyte (GB) as 1,000,000,000 bytes and a terabyte (TB) as 1,000,000,000,000 bytes. A computer operating system, however, reports storage capacity using powers of 2 for the definition of 1 GB = 2^30 = 1,073,741,824 bytes and therefore shows less storage capacity. Available storage capacity (including examples of various media files) will vary based on file size, formatting, settings, software and operating system, such as Microsoft Operating System and/or pre-installed software applications, or media content. Actual formatted capacity may vary.
  • IOPS: Input Output Per Second (or the number of I/O operations per second).
  • TBW: Terabytes Written. The number of terabytes that may be written to the SSD for the specified lifetime.
  • Read and write speed, tested on the state of "Host Memory Buffer (HMB) = On", may vary depending on the host device, read and write conditions, and file size.
  • Read and write speed may vary depending on various factors such as host devices, software (drivers, OS etc.), and read/write conditions.
  • MTTF (Mean Time to Failure) is not a guarantee or estimate of product life; it is a statistical value related to mean failure rates for a large number of products which may not accurately reflect actual operation. Actual operating life of the product may be different from the MTTF.
  • PCIe is a registered trademark of PCI-SIG.
  • NVMe is a registered or unregistered mark of NVM Express, Inc. in the United States and other countries.
  • Other company names, product names, and service names may be trademarks of third-party companies.
  • All information provided here is subject to change without prior notice.

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